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INDIUM TIN OXIDE
Another name：
CasNo: 50926-11-9 Purity： Enterprise technical standards Molecular Structure： In2O5Sn
Indium tin oxide Basic Product Information
| Product Name | Indium tin oxide | CAS | 50926-11-9 |
| Synonyms | stannic; indium(+3) cation; oxygen(-2) anion; | Molecular Formula | In2O5Sn |
| EINECS Number | Molecular Structure | ||
| Appearance | Light Yellow Powder |
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| Purity | Enterprise technical standards | ||
| Supply Ability | |||
Indium tin oxide Quality documents
Indium tin oxide Appearance/Package/Shipping/Storage
package
storage condition
Store in cool & dry place,Keep away from strong light and heat
Indium tin oxide Application
Indium tin oxide literature
Performance of InSnZrO as transparent conductive oxides
Zhang,Yu,Jin,Ge,Yin
, p. 955 - 962 (2010)
InSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium-tin-oxide (ITO) target and a zirconium target. X-ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical- electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10-3 to 2.20 × 10-3 ωcm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein-Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.
Indium tin oxide Upstream and downstream
50926-11-9 Upstream product
50926-11-9 Downstream Products
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